Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A, 4.5A
Rds On (Max) @ Id, Vgs 26 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) @ Vds 1240pF @ 10V
Power - Max 750mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)