Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Rds On (Max) @ Id, Vgs 10 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs 107nC @ 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 10V
Power - Max -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)