Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 580mA (Ta)
Rds On (Max) @ Id, Vgs 650 mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 50µA
Gate Charge (Qg) @ Vgs 2.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3