Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs 23 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) @ Vds 1880pF @ 20V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63