Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 37 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds 640pF @ 20V
Power - Max 10.8W, 24W
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD