MOSFET, N CH, 620V, 2.7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:620V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-251; No. of Pins:3; Operating Te
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 620V
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
Rds On (Max) @ Id, Vgs 2.5 Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) @ Vds 385pF @ 25V
Power - Max 45W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB
Buying Option 1
1
-
INR 689.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 689.3