Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
Rds On (Max) @ Id, Vgs 165 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 420pF @ 25V
Power - Max 1.6W
Mounting Type Surface Mount
Package / Case SOT-23-6