Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 14nC @ 5V
Input Capacitance (Ciss) @ Vds 345pF @ 25V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA