Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 105 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) @ Vds 800pF @ 25V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-PowerVDFN