Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 330mA
Rds On (Max) @ Id, Vgs 1.31 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) @ Vgs 1.2nC @ 4V
Input Capacitance (Ciss) @ Vds 43pF @ 10V
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666