MOSFET, N, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:650V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:50W; Transistor Case Style:TO-251; No. of Pins:3; Operating Temperature Max:1
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Rds On (Max) @ Id, Vgs 950 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 200µA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 490pF @ 25V
Power - Max 50W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA