Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Rds On (Max) @ Id, Vgs 950 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 200µA
Gate Charge (Qg) @ Vgs 22.9nC @ 10V
Input Capacitance (Ciss) @ Vds 580pF @ 25V
Power - Max 50W
Mounting Type Through Hole
Package / Case TO-220-3