Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Rds On (Max) @ Id, Vgs 6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) @ Vds 100pF @ 25V
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA