MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Max:150Â
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Rds On (Max) @ Id, Vgs 1.3 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 570pF @ 25V
Power - Max 63W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63