Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 10.3A (Tc)
Rds On (Max) @ Id, Vgs 154 mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id 2V @ 21µA
Gate Charge (Qg) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) @ Vds 444pF @ 25V
Power - Max 50W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB