Specification
FET Type 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 16A, 30A
Rds On (Max) @ Id, Vgs 6.8 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) @ Vds 820pF @ 10V
Power - Max 3.9W, 4.6W
Mounting Type Surface Mount
Package / Case -