Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Rds On (Max) @ Id, Vgs 3.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) @ Vgs 66nC @ 10V
Input Capacitance (Ciss) @ Vds 3105pF @ 30V
Power - Max 5.4W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN