Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.8A
Rds On (Max) @ Id, Vgs 49 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.4W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual