Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Rds On (Max) @ Id, Vgs 90 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 6.2nC @ 5V
Input Capacitance (Ciss) @ Vds 300pF @ 10V
Power - Max 12.5W
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8