Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.3A
Rds On (Max) @ Id, Vgs 45 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 800mW
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)