Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 36 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) @ Vgs 11.3nC @ 5V
Input Capacitance (Ciss) @ Vds 632pF @ 10V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead