MOSFET,NN CH,DIODE,40V,6A,8-SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; Operating
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 7.6A
Rds On (Max) @ Id, Vgs 27 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) @ Vds 855pF @ 20V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)