Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Rds On (Max) @ Id, Vgs 18.5 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) @ Vgs 11.8nC @ 5V
Input Capacitance (Ciss) @ Vds -
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)