MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.13W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperat
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.7A, 3A
Rds On (Max) @ Id, Vgs 53 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.13W, 1.2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)