N CHANNEL MOSFET, 200V, 4A, SOIC; Transi; N CHANNEL MOSFET, 200V, 4A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. of Pins:8
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.85A (Ta)
Rds On (Max) @ Id, Vgs 80 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.56W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)