Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Rds On (Max) @ Id, Vgs 45 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) @ Vds 1735pF @ 50V
Power - Max 5.9W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)