MOSFET, P, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:9.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs:-1.4V; Power Dissipation Pd:1.5W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Max:15
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta)
Rds On (Max) @ Id, Vgs 11 mOhm @ 13.7A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) @ Vgs 56nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)