Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs 8.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) @ Vds 1925pF @ 15V
Power - Max 5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)