Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)
Rds On (Max) @ Id, Vgs 216 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) @ Vds 350pF @ 30V
Power - Max 3.3W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)