MOSFET,N CH,30V,5.2A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Operat
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta), 5.2A (Tc)
Rds On (Max) @ Id, Vgs 42 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) @ Vds 560pF @ 15V
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3