TRANSISTOR, MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:1.49A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:900mW; Transistor Case Style:SOT-23; No. of Pins:3; Operating Temperature
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.49A (Ta)
Rds On (Max) @ Id, Vgs 200 mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 10nC @ 10V
Input Capacitance (Ciss) @ Vds 180pF @ 15V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3