MOSFET, N CH, 20V, 2.5A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:650mV; Power Dissipation Pd:830mW; Transistor Case Style:SOT-23; No. of Pins:3; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Rds On (Max) @ Id, Vgs 85 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 650mV @ 1mA
Gate Charge (Qg) @ Vgs 10nC @ 4.5V
Input Capacitance (Ciss) @ Vds 230pF @ 10V
Power - Max 830mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3