Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 670mA (Ta)
Rds On (Max) @ Id, Vgs 430 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA
Gate Charge (Qg) @ Vgs 2.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 290mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323