Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.06A (Ta)
Rds On (Max) @ Id, Vgs 150 mOhm @ 1.06A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) @ Vgs 9.3nC @ 5V
Input Capacitance (Ciss) @ Vds 375pF @ 10V
Power - Max 236mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666