MOSFET, P CH, -60V, -0.19A, SOT-416; Transistor Polarity:P Channel; Continuous Drain Current Id:-190mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:250mW; Transistor Case Style:SOT-416; No. of Pins:3; Oper
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
Rds On (Max) @ Id, Vgs 4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 1.7nC @ 15V
Input Capacitance (Ciss) @ Vds 23pF @ 25V
Power - Max 250mW
Mounting Type Surface Mount
Package / Case SC-75A