Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Ta)
Rds On (Max) @ Id, Vgs 2.9 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 34nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5600pF @ 10V
Power - Max 50W
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad