Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Rds On (Max) @ Id, Vgs 22 mOhm @ 50A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 140nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 110W
Mounting Type Through Hole
Package / Case TO-220-3