Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Rds On (Max) @ Id, Vgs 150 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 150nC @ 20V
Input Capacitance (Ciss) @ Vds 1150pF @ 25V
Power - Max 80W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA