Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 78A (Tmb)
Rds On (Max) @ Id, Vgs 6.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) @ Vgs 21.3nC @ 10V
Input Capacitance (Ciss) @ Vds 1226pF @ 15V
Power - Max 63W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK