Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 21.5A (Tc)
Rds On (Max) @ Id, Vgs 102 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 30.7nC @ 10V
Input Capacitance (Ciss) @ Vds 1568pF @ 30V
Power - Max 113W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK