Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 23.4A (Tmb)
Rds On (Max) @ Id, Vgs 26.8 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) @ Vds 1624pF @ 50V
Power - Max 41.1W
Mounting Type Through Hole
Package / Case TO-220-3 Isolated Tab