Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 50A (Tmb)
Rds On (Max) @ Id, Vgs 17 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 1573pF @ 40V
Power - Max 103W
Mounting Type -
Package / Case -