Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 32A (Ta)
Rds On (Max) @ Id, Vgs 5 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 1mA
Gate Charge (Qg) @ Vgs 32nC @ 2.5V
Input Capacitance (Ciss) @ Vds 4350pF @ 20V
Power - Max 8.3W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)