Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Rds On (Max) @ Id, Vgs 450 mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) @ Vgs 4.5nC @ 10V
Input Capacitance (Ciss) @ Vds 130pF @ 40V
Power - Max 400mW
Mounting Type Surface Mount
Package / Case 3-XFDFN Exposed Pad