Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 36 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) @ Vgs 15.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1890pF @ 10V
Power - Max 510mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3