MOSFET, N CH, 30V, 0.84A, SOT416; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):440mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:530mW; Transistor Case Style:SOT-416; No. of Pins:3; Operatin
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 840mA
Rds On (Max) @ Id, Vgs 440 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 0.65nC @ 4.5V
Input Capacitance (Ciss) @ Vds 37pF @ 25V
Power - Max 530mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416