Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Rds On (Max) @ Id, Vgs 43 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) @ Vds 612pF @ 30V
Power - Max 1.7W
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad