Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta)
Rds On (Max) @ Id, Vgs 23.5 mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) @ Vgs 45nC @ 4.5V
Input Capacitance (Ciss) @ Vds 294pF @ 10V
Power - Max 1.7W
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad