Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Rds On (Max) @ Id, Vgs 14 mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 34nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2175pF @ 10V
Power - Max 1.7W
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad