MOSFET P-CH 20V 4.8A 6TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-750mV; Power Dissipation Pd:2.2W; Transistor Case Style:SOT-457; No. of Pins:6; Operating
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.8A (Ta)
Rds On (Max) @ Id, Vgs 60 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) @ Vgs 10nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1020pF @ 20V
Power - Max 2.2W
Mounting Type Surface Mount
Package / Case SC-74, SOT-457